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| PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 600V VCE(sat) 3.0V G @VGE = 15V, IC = 6.5A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 13 6.5 52 52 7.0 52 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.50 -- 2 (0.07) Max. 2.1 3.5 -- 80 -- Units C/W g (oz) Revision 1 C-693 IRGBC20UD2 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 2.2 3.0 IC = 6.5A V GE = 15V -- 2.8 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 6.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.4 4.3 -- S VCE = 100V, I C = 6.5A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1700 VGE = 0V, V CE = 600V, T J = 150C -- 1.4 1.7 V IC = 8.0A See Fig. 13 -- 1.3 1.6 IC = 8.0A, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 16 2.5 7.8 60 29 130 65 0.21 0.22 0.43 60 30 210 180 0.71 7.5 330 65 6.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 22 IC = 6.5A 3.8 nC VCC = 400V 13 See Fig. 8 -- TJ = 25C -- ns IC = 6.5A, V CC = 480V 200 VGE = 15V, R G = 50 120 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 0.65 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 6.5A, V CC = 480V -- VGE = 15V, R G = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 I F = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 V R = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. C-694 IRGBC20UD2 10 Du ty c ycle: 5 0 % TJ = 1 2 5 C T s in k = 9 0 C Ga te d rive as sp e cified Tu rn -on lo sses in clud e effe cts o f re verse rec ove ry Po we r D issipatio n = 1 3W 8 Load Current (A) 6 6 0 % o f ra te d v o lta g e 4 2 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 100 100 I C , Collector-to-E m itter C urrent (A) TJ = 2 5C IC , Collector-to-Em itter C urrent (A) 10 TJ = 1 50 C TJ = 1 50 C 10 T J = 2 5C 1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itter V olta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-695 IRGBC20UD2 14 V G E = 15 V 4.0 V G E = 15 V 80 s P U L S E W ID TH M aximum D C Collector Current (A ) 12 V C E , C ollector-to-Em itter V oltage (V ) 3.5 10 I C = 1 3A 3.0 8 2.5 I C = 6.5A 6 2.0 4 I C = 3.3 A 2 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-696 IRGBC20UD2 700 V G E , G a te-to-E m itte r V o lta ge (V ) 100 600 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 6.5 A 16 C , Capacitance (pF ) 500 400 Cies Coes 12 300 8 200 100 Cres 4 0 1 10 0 0 4 8 12 16 20 V C E , C o llector-to-Em itter V oltage (V) Q g , To ta l G a te C h arg e (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.44 Total Switching Losses (mJ) 0.43 Total Switching Losses (mJ) VCC VGE TC IC = 480V = 15V = 25C = 6.5A 10 RG = 50 V GE = 15V V CC = 480V I C = 13A 1 IC = 6.5A I C = 3.3A 0.42 0.41 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-697 IRGBC20UD2 2.0 1.6 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switching Losses (mJ) RG TC V CC V GE = 50 = 150C = 480V = 15V 1000 VG E E 20 V G= T J = 125 C 100 1.2 S A FE O P E R A TIN G A R E A 10 0.8 1 0.4 0.0 0 3 6 9 12 A 15 0.1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-698 IRGBC20UD2 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C IF = 16A t rr - (ns) 60 I F = 8.0A I IRRM - (A) I F = 16A 10 40 IF = 8.0A I F = 4.0A I F = 4.0A 20 0 100 di f /dt - (A/s) 1000 1 100 1000 di f /dt - (A/s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 500 10000 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C 300 di(rec)M/dt - (A/s) Q RR - (nC) I F = 16A 200 IF = 4.0A 1000 IF = 8.0A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 100 100 di f /dt - (A/s) 1000 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-699 IRGBC20UD2 90% Vge +Vge Same type device as D.U.T. Vce 80% of Vce 430F D.U.T. Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 1 - JEDEC Outline TO-220AB C-700 Section D - page D-12 |
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